Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Deep level defects in He-implanted n-6H-SiC studied by deep level transient spectroscopy

Chen, X. D.; Ling, C. C.; Fung, S.; Beling, C. D.; Wu, H. S.; Brauer, G.; Anwand, W.; Skorupa, W.

Keywords: deep levels; SiC; defects; DLTS; ion implantation

• Vortrag (Konferenzbeitrag)
  Materials Research Society (MRS), 2004 Spring Meeting, 12.-16.04.2004, San Francisco/ CA, USA

Permalink: https://www.hzdr.de/publications/Publ-9900