Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Focused Ion beam (FIB) systems employing liquid metal ion sources (LMISs) have become of increasing importance in the microelectronics research and industry [1]. Applications of LMISs include IC analysis and modification, maskless ion implantation, secondary ion mass spectroscopy, scanning ion microscopy and ion beam lithography [2-3].
Alloy LMISs are the basis of mass separated FIB systems applying a variety of ion species which can be focused into diameters smaller than 10nm with current densities of several A/cm2 [4].
In this work a Ga38Bi62 alloy liquid metal ion source (Tmelt = 222°C), prepared on a mechanical treated Ta - emitter has been studied, which allows to implant in the case of a silicon substrate shallow donor ions (Bi) as well as acceptors (Ga) in the sub micron range without changing the source. A detailed analysis of the mass spectra as a function of emission current, obtained from this source, shown in Fig. 1, was used to investigate the mechanism for the production of single and double-charged ions. The transition metals in the mass spectra result from the re-sputtered extractor stainless steal material. Moreover, we represent the intensity of cluster ions extracted by the source, as function of emission current. Theoretical modeling support the experimental results.
[1]P.D. Prewett, G.L.R. Mair, Focused Ion Beams from Liquid Metal Ion Sources,
Taunton, Somerset, UK: Research Studies Press, 1991, Chap. 2.
[2]J. Orloff et al, High Resolution Focused Ion Beams – FIB and Its Applications,
Kluwer Academic / Plenum Publishers, 2002, Chap. 6.
[3]L. Bischoff, J. Teichert, S. Hausmann, Th. Ganetsos and GLR. Mair, Microelectronic Engineering, 53 (2000) 613.
[4]L. Bischoff, Ultramicroscopy, 103 (2005) 59.