Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

In order to investigate the possibility to create and stabilize a DMS behavior in the (Ga,Fe)N-system, p-doped GaN was implanted with 200 keV 57Fe+ ions at 350°C, RT and -30°C with fluences Φ = 1*10^16 cm^-2 - 1.6*10^17 cm^-2. Magnetic electronic and structural properties of as implanted as well as subcequently annealed samples were investigated by AES, CEMS, TEM, SQUID and XRD techniques.