Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

1 Publikation

Excess vacancies induced by ion beam implantation into silicon

Kögler, R.; Eichhorn, F.; Peeva, A.; Voelskow, M.; Mücklich, A.; Serre, C.; Skorupa, W.

Abstract

The process of formation of excess vacancies by ion implantation is explained. Moreover, the simulation of the process, the experimental detection of excess vacancies and their application for defect engineering is described.

Keywords: Ion implantation; Silicon; Excess vacancies; Electron microscopy; Positron annihilation spectrometry

  • Vortrag (Konferenzbeitrag)
    V th international conference on ion implantation and other applications of ions and electrons, ION2004, June 14-17, 2004, Kazimierz Dolny, Poland

Permalink: https://www.hzdr.de/publications/Publ-6345

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