Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Plasma source ion implantation (PSII) has been developed
as an alternative technique to circumvent the limitations of conventional
ion implantation, like the requirements of a complicated target handling
and beam raster system for a uniform ion implantation of 3-dimensional
samples. In this method, a plasma sheath conformably surrounds the target.
By applying negative high voltage pulses, positively charged ions are accelerated
from the plasma trough the sheath and implanted into the target. Critical
parameters for the further development of this implantation process are
the ion implantation current and the sheath expansion characteristics.