Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Study of the different stages of damage induced by 200 keV Ge+ ion implantation in 6H-SiC

Pacaud, Y.; Brauer, G.; Perez-Rodriguez, A.; Stoemenos, J.; Barklie, R.; Voelskow, M.; Skorupa, W.

• Beitrag zu fremdem Sammelwerk
  IC SCRM 1995, Kyoto, Japan, IOP Publishing

Permalink: https://www.hzdr.de/publications/Publ-420