Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Doping allows us to modify semiconductor materials for desired electrical and optical properties. The solubility limit is a fundamental barrier for dopants incorporated into a specific semiconductor. Ultra-doping or hyper-doping refers to doping a semiconductor much beyond the corresponding solid solubility limit and often results in exotic properties. In this talk, we show that ion implantation combined with flash lamp annealing in millisecond and pulsed laser melting in nanosecond can realize ultra-doping in widely used semiconductors, including Si [1-5], Ge [6-8] and GaAs [9]. Various dopants, from conventional shallow-level impurities to deep-level ones, can be substitutionally incorporated up to a few atomic percent. This leads to the insulator-to-metal transition and the large modification to the semiconductor bandgap. The ultra-doped semiconductors can be used as photodetectors and plasmonic elements [10]. Ion implantation followed by annealing is a well-established method to dope Si, being maturely integrated with the IC industry production line. Therefore, ultra-doped semiconductors can be a wafer-scale platform for photonics.

[1] M. Wang, et al., Phys. Rev. Applied. 10, 024054 (2018)
[2] M. Wang, et al., Phys. Rev. Applied. 11, 054039 (2019)
[3] M. Wang, et al., Phys. Rev. B 102, 085204 (2020)
[4] M. Wang, et al., Adv. Optical Mater. 9, 2001546 (2021)
[5] M. Wang, et al., Nanoscale, 14, 2826-2836 (2022)
[6] S. Prucnal, et al., Scientific Reports 6, 27643 (2016)
[7] S. Prucnal, et al., Phys. Rev. Materials 3, 054802 (2019)
[8] S. Prucnal, et al., New J. Phys. 22, 123036 (2020)
[9] J. Duan, et al., New J. Phys. 23, 083034 (2021)
[10] G. V. Naik, V.M. Shalaev, A. Boltasseva, Alternative Plasmonic Materials: Beyond Gold and Silver, Adv. Mater. 25, 3264 (2013).