Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

The electrical properties of Al, B, N implanted 6H-SiC after flash lamp annealing are discussed in comparison with furnace annealing. The electrical activity of Al is for high concentrations distinctly enhanced using flash lamp annealing. For B implanted layers only a soft enhancement is possible using flash lamp annealing but the dopant outdiffusion is strong reduced. N activated by a two step process. A high temperature short time step follow a furnace step at lower temperatures leads to a soft enhanced electrical activation compared to furnace annealing.