Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Additional self-interstitials were introduced into the vacancy-rich depth range around half of the projected ion range of high energy ion implanted silicon in order to balance radiation induced excess vacancies. The trapping of Cu atoms was found to be not effected by this procedure. Additional interstitial loops were formed during annealing if the concentration of self-interstitials exceeded a certain threshold. These dislocation loops did not act as gettering centres for Cu atoms. The results obtained are not in agreement with the assumption that excess vacancies are the gettering centres for metal impurities like Cu. Instead, it may be assumed that small clusters of self-interstitials act as gettering centres.