Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

The following work illustrates top-down fabrication and characterization of reconfigurable, undoped silicon nanowire field effect transistors with Schottky junctions on silicon on insulator (SOI) substrate. The fabrication scheme is based on electron beam lithography (EBL) on a SOI substrate followed by reactive ion etching (RIE) with HSQ etch mask. In best case we fabricated nanowires with 20 nm width and 60 nm pitch.
Nickel-silicide Schottky junctions were created inside the nanowire by ni-sputtering followed by forming gas annealing. Diffusion of nickel in silicon nanowire is precisely controlled by optimizing the time of annealing. Detailed morphological analyses of the nanowires were done by transmission electron microscopy (TEM) at Dresden Center for Nanoanalysis to identify the strained deformation in silicon crystal structure due to silicidation.