Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Metal induced crystallization (MIC) is a promising technique for low-temperature thin film transistor fabrication and graphene synthesis. In MIC, a transition metal catalyzes the crystallization of the amorphous phase of a group IV element by bond screening near the interface and facilitation of nucleation. So far, in situ studies have been performed using X-ray diffraction, which is sensitive to the degree of crystallinity. In situ Rutherford backscattering spectrometry has the advantage of elemental depth resolution and time resolved tracking of diffusion and layer exchange processes. Graphene formation through MIC has been demonstrated with an a-C/Ni layer stack [1].
As a model system for MIC, the Si/Ag bilayer system is studied here. The Si/Ag layer stacks are annealed at temperatures of 380 to 700 °C. Depth profiles of the elements are investigated by in situ RBS. Their analysis reveals the diffusion kinetics of the elements. The changes in the phase structure are explored by in situ Raman spectroscopy. Both the quick initial nucleation and ensuing growth processes are investigated.
[1] Weatherup et al., Nano Letters 13, pp. 4624 (2013)