Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

We present Raman, terahertz transmission, and transport measurements on (BiIn)2Se3 films to study the evolution of phonon modes and resistivity with an increasing indium content across the metal-insulator phase transition. The frequencies of two Raman-active modes E2g and A21g as well as an infrared-active mode Eu increase with an increasing indium content due to the smaller atomic weight of indium compared to bismuth. Terahertz data are fitted by a Drude Lorentz model. Drude scattering rates increase from 47 to 75 cm -1 with an increasing indium content from 0% to 16% due to stronger impurity scattering. The carrier concentration drops significantly for x=24%. The temperature dependence of the resistivity switches from metallic at x=16% to insulating at x =24%, indicating a metal-insulator transition in between.