Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Investigation of the effects of high temperature implantation and post implantation annealing on the electrical behaviour of nitrogen implanted $-SiC films

Reichert, W.; Lossy, R.; Gonzalez Sirgo, M.; Obermeier, E.; Skorupa, W.

• Diam. Relat. Mater. 6 (1997) 1445

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