Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf
1 PublikationSingle pairing spike-timing dependent plasticity inBiFeO3 memristors with a time window of 25ms to 125µs
Du, N.; Kiani, M.; Mayr, C. G.; You, T.; Buerger, D.; Skorupa, I.; Schmidt, O. G.; Schmidt, H.
Abstract
Memristive devices are popular among neuromorphic engineers for their ability to emulate forms of spike-driven synaptic plasticity by applying specific voltage and current waveforms at their two terminals. In this paper, we investigate spike-timing dependent plasticity(STDP) with a single pairing of one presynaptic voltage spike and one post-synaptic voltage spike in a BiFeO3 memristive device. In most memristive materials the learning window is primarily a function of the material characteristics and not of the applied waveform. In contrast, we show that the analog resistive switching of the developed artificial synapses allows to adjust the learning time constant of the STDP function from 25ms to 125μs via the duration of applied voltage spikes. Also, as the induced weight Change may degrade, we investigate the remanence of the resistance change for several hours after analog resistive switching, thus emulating the processes expected in biological synapses. As the power consumption is a major constraint in neuromorphic circuits, we show methods to reduce the consumed energy per setting pulse to only 4.5 pJ in the developed artificial synapses.
Keywords: BiFeO3 memristor; artificial synapse; single Pairing STDP; memory consolidation; learning window; low-power device
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 23091) publication
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Frontiers in Neuroscience Volume 9(2015), 227
DOI: 10.3389/fnins.2015.00227
Cited 53 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-23091
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