Switchable multi-color light emitter based on Eu implanted SiO2 layers confined in a MOS structure

Rebohle, L.; Prucnal, S.; Sun, J. M.; Helm, M.; Skorupa, W.

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Switchable multi-color light emitter based on Eu implanted SiO2 layers confined in a MOS structure

Rebohle, L.; Prucnal, S.; Sun, J. M.; Helm, M.; Skorupa, W.

Abstract

Recent results regarding the electroluminescence properties of Si-based light emitters made by ion implantation are presented. The focus is on MOS structures either implanted with Eu or with Gd co-implanted with K or F.

Eingeladener Vortrag (Konferenzbeitrag)
Silicon to Light & Light to Silicon - Materials, Characterisation and Applications, 09.-10.07.2007, Halle, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-10746

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