Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

As the scaling of silicon devices to 100 nm channel length requires the formation of ultra-shallow (< 60 nm) junctions, high depth resolution analytical techniques become necessary for the characterization of the dopant and damage distributions. In situ single wavelength Ellipsometric
Etch Depth Profiling (EEDP) and non-destructive Variable Angle of incidence Spectroscopic Ellipsometry (VASE) have been used to obtain accurate and quantitative information on the depth profiles of radiation damage produced by low energy, room temperature ion implantation of B⁺ into Si.