Equipment Nanocomposite Materials
ClusterTool - Multifunctional UHV System -
The ClusterTool offers excellent conditions to realize experiments and investigations for different materials systems. A major advantage of the setup is the ability to perform interdisciplinary multi-step experiments. In situ RBS, Raman, ERDA and Ellipsometry measurements allow detailed investigations of the materials structure and properties during annealing (up to 1000°C) without breaking the vacuum. Multi-step experiments involving thin film growth, annealing in vacuum or gas/plasma environments, surface and structure modification and ion beam analysis, provided by the 6 MV beamline of the Ion Beam Center at HZDR, can be performed at the ClusterTool.
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contact: Dr. M. Krause, matthias.krause@hzdr.de , 0351 / 260 - 3578
3D-model of the ClusterTool
System Components
Details
Raman spectroscopy chamber
distrubution chamber
environmental chamber
sputtering chamber
UHV tribometer
force sensor with 1 mN and 10 mN
oscillating and rotary drive
different atmospheres
sample heating up to 100°C
ion beam analysis chamber
in situ RBS measurements
in situ ERDA measurements
sample heating up to 800°C
storage chamber
Ion Beam Sputtering / Ion Beam Assisted Deposition (IBS/IBAD) - Dual ion beam deposition
Details
IBAD beam during deposition
3 cm Kaufman ion source, ion energy 100-1200 eV
Plasma bridge neutralization of the sputtering beam
3 cm assistant Kaufman source, ion energy 25-1200 eV
6” target (selection of materials Ti,Ag,Ni,Co,Cr,Ge,Fe,Ta,Mo,Zr,Nb,Mn,C,SiO3,Si)
Growth rates 1-10 nm/min measurable by rate monitor
sample heating up to 600°C
High Power Impulse Magnetron sputtering setup (HiPIMS)
Details
HiPIMS
3“ targets (selection of materials Ti,Mo,C,WC,Cu,Al,Mo,Zr,Ni,W)
Super Imposed Pulse Power Supply, MELEC GmbH
different modes possible: unipolar pulsing, bipolar pulsing
rotatable sample holder
DC Magnetron sputtering setup
Details
reactive/non-reactive sputtering
3" heatable substrate holder
substrate XYZ-manipulator and heating option up to 600°C
process gas: Ar, Reactive gases: O2, N2, H2
plasma emmisson monitoring
2" and 3" targets (selection of materials B,BN,Si,C,In,InSn,Sn,SnZn,Zn,Cu,Al,Cr,Ag,Mo,Al,V,Nb,Ti)
Annealing chamber
Details
1" heatable substrate holder,temperatures up to 900 °C
annealing atmospheres: Ar, O2, defined pressure
in situ four point probe integrated for monitoring of electrical properties evolution during annealing of thin films
Nanoindenter UNAT from Asmec with Scratch Modul
Details
Angle of contact measuring device Krüss DSA 10
Details
Solid Spec 3700DUV (Shimadzu)
Details
Spectral photometer:
Direct detection unit, spectral range: 190-3300 nm (N2 purging: 165-3300 nm)
Integrating sphere (Spectralon): 200-2600 nm
Detectors: photomultiplier (165-1000 nm), PbS (700-1800 nm), InGaAs (1600-3300 nm)
Sample size (max): 4 cm x 50 cm x 70 cm
Application
Precise measurements of transmittance and reflectance spectra
Reflectance from the strongly scattering surfaces
Ellipsometer (Woollam M-2000)
Details
Ellipsometer
Fixed-angle illumination-detection geometry
rotating compensator
Wavelength range 211 nm to 1688 nm
evaluation software WVASE
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