Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

Electrically driven, Si-based light emitters are of great interest for integrated photonic applications, especially for smart biosensors. Among the possible candidates Nd-implanted MOS devices are of special interest because of the emission wavelength of 900 nm of Nd3+ which have the potential to integrate a complete SPR (surface plasmon resonance) measurement in one chip.
In this study we explore the influence of the Nd-concentration and the annealing parameters on the electrical and optoelectronic properties. The focus is on the electroluminescence and the electrical properties of the devices which will be compared to those of Er-implanted devices.